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Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templatesLUBING ZHAO; TONGJUN YU; JIEJUN WU et al.Applied surface science. 2010, Vol 256, Num 7, pp 2236-2240, issn 0169-4332, 5 p.Article

Strain effect on polarized optical properties of c-plane GaN and m-plane GaNRENCHUN TAO; TONGJUN YU; CHUANYU JIA et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 206-210, issn 1862-6300, 5 p.Conference Paper

Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to CuYONGJIAN SUN; TONGJUN YU; ZHIZHONG CHEN et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125022.1-125022.4Article

Magnetic and magneto-transport properties of Ga_1-xMn_xN grown by MOCVDXUELIN YANG; ZHITAO CHEN; JIEJUN WU et al.Journal of crystal growth. 2007, Vol 305, Num 1, pp 144-148, issn 0022-0248, 5 p.Article

Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVDTONGJUN YU; YAOBO PAN; ZHIJIAN YANG et al.Journal of crystal growth. 2007, Vol 298, pp 211-214, issn 0022-0248, 4 p.Conference Paper

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor depositionZHENG LI; YUXUAN JIANG; TONGJUN YU et al.Applied surface science. 2011, Vol 257, Num 18, pp 8062-8066, issn 0169-4332, 5 p.Article

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substratesYONGJIAN SUN; SIMEON TRIEU; TONGJUN YU et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085008.1-085008.5Article

Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDsLIUBING HUANG; TONGJUN YU; ZHIZHONG CHEN et al.Journal of luminescence. 2009, Vol 129, Num 12, pp 1981-1984, issn 0022-2313, 4 p.Conference Paper

Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVDXUELIN YANG; JIEJUN WU; ZHITAO CHEN et al.Solid state communications. 2007, Vol 143, Num 4-5, pp 236-239, issn 0038-1098, 4 p.Article

Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-offTONGJUN YU; ZILAN LI; QIN, Z. X et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 12, pp 2783-2786, issn 0370-1972, 4 p.Conference Paper

Luminescence degradation of InGaN/GaN violet LEDsTONGJUN YU; SHUPING SHANG; ZHIZHONG CHEN et al.Journal of luminescence. 2007, Vol 122-23, pp 696-699, issn 0022-2313, 4 p.Conference Paper

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayersYAOBO PAN; TONGJUN YU; ZHIJIAN YANG et al.Journal of crystal growth. 2007, Vol 298, pp 341-344, issn 0022-0248, 4 p.Conference Paper